We have developed the combination of an etching and deposition technique thatenables the fabrication of locally gated graphene nanostructures of arbitrarydesign. Employing this method, we have fabricated graphene nanoconstrictionswith local tunable transmission and characterized their electronic properties.An order of magnitude enhanced gate efficiency is achieved adopting the localgate geometry with thin dielectric gate oxide. A complete turn off of thedevice is demonstrated as a function of the local gate voltage. Such strongsuppression of device conductance was found to be due to both quantumconfinement and Coulomb blockade effects in the constricted graphenenanostructures.
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